Balasubramanian, Sathya and Rao, Koteswara KSR and Balasubramanian, N and Kumar, Vikram (1995) Effect of hydrogenation and thermal annealing on the photoluminescence of p-InP. In: Journal of Applied Physics, 77 (10). pp. 5398-5405.
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The effect of hydrogenation and thermal annealing on the photoluminescence (PL) of 1nP:Mg and 1nP:Zn is presented. On hydrogenation, a rise in near-band-edge PL intensity by a factor of 16 for the InP:Mg sample and a factor of 50 for the InP:Zn sample is observed and this is attributed to the passivation of nonradiative centers. A donor-acceptor pair transition before hydrogenation in the lnP:Mg sample and after hydrogenation in the 1nP:Zn sample was observed. In both cases, the magnitude of the shift in peak position with excitation intensity shows the involvement of a donor deeper than the normally present shallow donors. The ionization energy of the donor in 1nP:Mg is estimated to be 48 meV and that in InP:Zn is estimated to be <40 meV. No hydrogenation induced radiative transitions were observed. In the 1nP:Mg samples, the acceptor passivation effects are lost after annealing at a temperature of 350 $^oC$ for 2 min, whereas the nonradiative center passivation after hydrogenation is not completely lost. In InP:Zn, the acceptor passivation along with nonradiative and deep center passivation are lost after an annealing treatment of 300 $^oC$ for 2 min.A thermally induced D-A pair emission in InP:Zn which moves to lower energies with increasing annealing temperature is observed. Such a transition is not observed for InP:Mg. This can be either due to a preferential pairing of the donor and acceptor which becomes randomized after the heat treatment or due to the removal of hydrogenation effects by annealing.
|Item Type:||Journal Article|
|Additional Information:||The copyright belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||15 Nov 2006|
|Last Modified:||19 Sep 2010 04:29|
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