Ghosh, Arindam and Raychaudhuri, AK (2000) Universal Conductance Fluctuations in Three Dimensional Metallic Single Crystals of Si. In: Physical Review Letters, 84 (20). pp. 4681-4684.
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In this paper we report the measurement of conductance fluctuations in 3D crystals of Si made metallic by heavy doping. $(L/L_\phi \sim10^3 $ , where $L_\phi $ is the phase coherence length.) Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations as a predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of $L^3 _\phi $ were found to be saturated at $<( \delta G_\phi)^2 >$ $\approx $ $(e^2 /h)^2 $. An accurate knowledge of the level of disorder enables us to calculate the change in conductance $\delta G_1 $ due to movement of a single scatterer as $<(\delta G_1)^2 >$ ~ $(e^2 /h)^2 $, which is ~2 orders of magnitude higher than its theoretically expected value in 3D systems.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Physical Society.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||07 Jul 2006|
|Last Modified:||19 Sep 2010 04:30|
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