ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Electron cyclotron resonance plasma source for ion assisted deposition of thin films

Vargheese, Deenamma K and Rao, Mohan G (2000) Electron cyclotron resonance plasma source for ion assisted deposition of thin films. In: Review of Scientific Instruments, 71 (2). pp. 467-472.

[img] PDF
Electron_cyclotron_resonance_plasma_source_for_ion_assisted_deposition.pdf
Restricted to Registered users only

Download (88Kb) | Request a copy

Abstract

An electron cyclotron resonance (ECR) plasma source (10 cm in diameter) has been developed for ion assisted sputter deposition of thin films. Variation of plasma parameters like ion density, electron temperature, plasma potential, and floating potential as a function of pressure and microwave power has been studied using Langmuir probe analysis. The ECR source gives an ion density of $1.01\times 10^{11} /cm^3$ at a distance of 8 cm from the source exit at a pressure of $8\times 10^{-4}$ mbar and 400 W of microwave power. The uniformity of the plasma parameters at the substrate position was found to be $\pm 2$ % over a diameter of 12 cm. Thin films of copper and silicon nitride have been deposited by rf sputtering in the presence of ECR plasma. The properties showed a significant change at an ECR power of 100 W.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 02 Aug 2006
Last Modified: 19 Sep 2010 04:30
URI: http://eprints.iisc.ernet.in/id/eprint/7977

Actions (login required)

View Item View Item