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Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation

Hudait, Mantu Kumar and Krupanidhi, SB (2000) Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation. In: Materials Research Bulletin, 35 (6). pp. 909-919.

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Abstract

The Si-doped GaAs/Ge heterostructures have been grown under different growth conditions by low-pressure metal– organic vapor-phase epitaxial technique and investigated by atomic force microscopy (AFM). Our results indicate that the 6° offcut Ge substrate coupled with a growth temperature of ~675°C, growth rate of ~3 $\mu$ m/h and a V/III ratio of ~88 are optimum set of growth conditions for the buffer layer growth of GaAs/Ge heterostructure solar cell. The surface morphology was found to be very good on 6° off-oriented Ge substrate and the root mean square (rms) roughness was approximately 3.8 nm over $3\times3 \mu m^2$ area scan compared to 2° and 9° off-oriented Ge substrates.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: A.Semiconductors;A.Thin Films;B.Epitaxial Growth;C.Atomic Force Microscopy
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 02 Aug 2006
Last Modified: 19 Sep 2010 04:30
URI: http://eprints.iisc.ernet.in/id/eprint/7981

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