Hudait, Mantu Kumar and Krupanidhi, SB (2000) Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation. In: Materials Research Bulletin, 35 (6). pp. 909-919.
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The Si-doped GaAs/Ge heterostructures have been grown under different growth conditions by low-pressure metal– organic vapor-phase epitaxial technique and investigated by atomic force microscopy (AFM). Our results indicate that the 6° offcut Ge substrate coupled with a growth temperature of ~675°C, growth rate of ~3 $\mu$ m/h and a V/III ratio of ~88 are optimum set of growth conditions for the buffer layer growth of GaAs/Ge heterostructure solar cell. The surface morphology was found to be very good on 6° off-oriented Ge substrate and the root mean square (rms) roughness was approximately 3.8 nm over $3\times3 \mu m^2$ area scan compared to 2° and 9° off-oriented Ge substrates.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Keywords:||A.Semiconductors;A.Thin Films;B.Epitaxial Growth;C.Atomic Force Microscopy|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||02 Aug 2006|
|Last Modified:||19 Sep 2010 04:30|
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