Suresh, PR and Ramkumar, K and Satyam, M (1994) Current-Voltage Characteristics of Grain Boundaries in Cast Polycrystalline Silicon. In: Physica Status Solidi (a), 141 (2). pp. 381-388.
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Current-voltage ( I - U ) characteristics of grain boundaries (GBs) in cast polycrystalline silicon are reported. It is found experimentally that these I - U characteristics show a dependence on the polarity of the applied voltage. A model is developed to understand the I-U characteristics of GBs in semiconductors, taking into account the observed difference in doping concentration in the grains forming the GB. A single trap energy level is assumed for GB interface states. The potential barriers at GBs are estimated by calculating the increase in the density of filled interface states at the GB due to the applied bias. The I-U characteristics calculated through this model show the same general features as those of measured I-U characteristics.
|Item Type:||Journal Article|
|Additional Information:||The copyright of this article belongs to WILEY-VCH Verlag GmbH & Co. KGaA. DOI link not working - but DOI is same in Abstract page of the article.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||14 Nov 2006|
|Last Modified:||19 Sep 2010 04:30|
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