Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N and Premachandran, V (1994) Resistance switching in indium phosphide using hydrogen passivation of acceptors. In: Applied Physics Letters, 64 (17). pp. 2256-2257.
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This letter demonstrates the use of dopant passivation by hydrogen in a highly doped semiconductor, for resistance switching applications. The acceptor passivation by hydrogen was utilized to form a rectifying contact on InP which otherwise showed nonrectifying behavior due to high dopant concentration. A reverse bias annealing of the diodes converted the rectifying contact into a nonrectifying one whereas an anneal without bias left it unchanged. The attainment of selective conversion is explained in terms of the reactivation processes involved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of thsim article belongs to AMerican Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||19 Oct 2006|
|Last Modified:||19 Sep 2010 04:31|
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