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Resistance switching in indium phosphide using hydrogen passivation of acceptors

Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N and Premachandran, V (1994) Resistance switching in indium phosphide using hydrogen passivation of acceptors. In: Applied Physics Letters, 64 (17). pp. 2256-2257.

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Abstract

This letter demonstrates the use of dopant passivation by hydrogen in a highly doped semiconductor, for resistance switching applications. The acceptor passivation by hydrogen was utilized to form a rectifying contact on InP which otherwise showed nonrectifying behavior due to high dopant concentration. A reverse bias annealing of the diodes converted the rectifying contact into a nonrectifying one whereas an anneal without bias left it unchanged. The attainment of selective conversion is explained in terms of the reactivation processes involved.

Item Type: Journal Article
Additional Information: Copyright of thsim article belongs to AMerican Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 Oct 2006
Last Modified: 19 Sep 2010 04:31
URI: http://eprints.iisc.ernet.in/id/eprint/8320

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