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Current-controlled negative-resistance behaviour and memory switching in bulk As-Te-Se glasses

Chatterjee, R and Asokan, S and Titus, SSK (1994) Current-controlled negative-resistance behaviour and memory switching in bulk As-Te-Se glasses. In: Journal of Physics D: Applied Physics, 27 (12). pp. 2624-2627.

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Abstract

Tne current-voltage characteristics and electrical switching behaviour of bulk $As_xTe_{100-x-y}Se_y$ glasses have been investigated over a wide composition range $(25\leq x \leq 60; 10 \leq y \leq 25)$. Most of the glasses studied have been found to exhibit a current-controlled negative-resistance behaviour with memory. A sharp switching is observed in the glass of composition $As_{50}Te_{30}Se_{20}$. A strong dependence of the switching fields on composition, which resembles the variation of crystallization temperatures with X, has been noticed. Further, a current pulse of 100 mA amplitude and 10 $\mu s$ duration is found to re-set the memory-switched As-Te-Se glasses to the original high-resistance state. The sample can be made to switch again, with $\pm2%$ variation in the swtiching fields. This indicates the possible application of these materials in 'read mostly' memories.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 19 Oct 2006
Last Modified: 19 Sep 2010 04:31
URI: http://eprints.iisc.ernet.in/id/eprint/8326

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