ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

A deep-level spectroscopic technique for determining capture cross - section activation energy of Si-related DX centers in $Al_xGa_{1-x}As$

Ghosh, Subhasis and Kumar, Vikram (1994) A deep-level spectroscopic technique for determining capture cross - section activation energy of Si-related DX centers in $Al_xGa_{1-x}As$. In: Journal of Applied Physics, 75 (12). pp. 8243-8245.

[img] PDF
A_deep-level-348.pdf
Restricted to Registered users only

Download (293Kb) | Request a copy

Abstract

A deep-level transient spectroscopy (DLTS) technique is reported for determining the capture cross-section activation energy directly. Conventionally, the capture activation energy is obtained from the temperature dependence of the capture cross section. Capture cross-section measurement is often very doubtful due to many intrinsic errors and is more critical for nonexponential capture kinetics. The essence of this technique is to use an emission pulse to allow the defects to emit electrons and the transient signal from capture process due to a large capture barrier was analyzed, in contrast with the emission signal in conventional DLTS. This technique has been applied for determining the capture barrier for silicon-related DX centers in $Al_xGa_{1-x}As$ for different AlAs mole fractions.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute Of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 13 Nov 2006
Last Modified: 19 Sep 2010 04:31
URI: http://eprints.iisc.ernet.in/id/eprint/8330

Actions (login required)

View Item View Item