Rao, Koteswara KSR and Kumar, V and Premachandran, SK and Raghunath, KP (1991) Interaction of gold-related and irradiation-induced defects in silicon. In: Journal of Applied Physics, 69 (12). pp. 8205-8209.
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The evidence of interaction of gold-related defects with irradiation-induced defects in silicon is presented. It is observed that the concentrations of both the gold-related levels increase with increasing dose of irradiation. The linear relation between gold-related acceptor concentration $N_A_u_$ and the divacancy $N_V_-_V_$ suggests that the gold-related level is a gold-divacancy complex rather than gold-vacancy complex.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||15 Sep 2006|
|Last Modified:||19 Sep 2010 04:31|
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