Suresh, PR and Satyam, M (1993) Combined effect of aluminium diffusion and annealing on GB properties in cast polysilicon. In: Solar Energy Materials and Solar Cells, 30 (3). pp. 193-199.
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This paper describes the effect of aluminium diffusion into and annealing of polycrystalline silicon on the grain boundary traps. It has been shown that diffusion of aluminium at 700°C followed by annealing at a moderately higher temperature of about 450°C reduces the density of trap states at the grain boundaries considerably.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||22 Sep 2006|
|Last Modified:||19 Sep 2010 04:31|
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