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Combined effect of aluminium diffusion and annealing on GB properties in cast polysilicon

Suresh, PR and Satyam, M (1993) Combined effect of aluminium diffusion and annealing on GB properties in cast polysilicon. In: Solar Energy Materials and Solar Cells, 30 (3). pp. 193-199.

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Abstract

This paper describes the effect of aluminium diffusion into and annealing of polycrystalline silicon on the grain boundary traps. It has been shown that diffusion of aluminium at 700°C followed by annealing at a moderately higher temperature of about 450°C reduces the density of trap states at the grain boundaries considerably.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 22 Sep 2006
Last Modified: 19 Sep 2010 04:31
URI: http://eprints.iisc.ernet.in/id/eprint/8588

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