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Electrical switching behaviour of semiconducting aluminium telluride glasses

Prakash, S and Asokan, S and Ghare, DB (1994) Electrical switching behaviour of semiconducting aluminium telluride glasses. In: Semiconductor Science and Technology, 9 (8). pp. 1484-1488.

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Abstract

Semiconducting chalcogenide glasses, $AI_xTe_{100-x}$ with the atomic percentage of ahminim (x) varying between 15 and 25, have been prepared by the vacuum sealed-melt quenching technique. The I-V characteristics of these samples have been measured at four different temperatures using a custom-built PC-based system. All the compositions studied are found to exhibit a current- controlled negative resistance irreversible switching behaviour. Furthermore, it is observed that there is an increase in the switching field $'E_t'$ of $AI_xTe_{100-x}$ glasses with increasing Al content, The threshold field for a given composition is found to decrease with increasing temperature.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to IOP.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 19 Sep 2006
Last Modified: 19 Sep 2010 04:31
URI: http://eprints.iisc.ernet.in/id/eprint/8703

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