Devika, M and Reddy, Koteeswara N and Ramesh, K and Gunasekhar, KR and Gopal, ESR and Reddy, Ramakrishna KT (2006) Influence of annealing on physical properties of evaporated SnS films. In: Semiconductor Science and Tehcnology, 21 (8). pp. 1125-1131.
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The effect of annealing on the composition, crystal structure, surface features and electro-optical properties of tin mono-sulfide (SnS) films, deposited by thermal evaporation at $300^\circ C$, has been studied. Elemental analysis of the films shows sulfur deficiency, which increases at higher annealing temperatures $(T_a)$. The SnS structure in the as-deposited and annealed films remains orthorhombic. With an increase in $Ta_$, the grain size and the surface roughness are reduced. The electrical resistivity also decreases with increasing $T_a$. The variation of activation energy and optical parameters with $Ta_$ has been explained by taking into account the degree of preferred orientation of the grains. The films annealed at $100^\circ C$ show some unusual features compared to those annealed at other temperatures.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Institute of Physics|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||13 Oct 2006|
|Last Modified:||19 Sep 2010 04:32|
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