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Dielectric properties of (110) oriented $PbZrO_3$ and La-modified $PbZrO_3$ thin films grown by sol-gel process on $Pt111/Ti/SiO_2/Si$ substrate

Parui, Jayanta and Krupanidhi, SB (2006) Dielectric properties of (110) oriented $PbZrO_3$ and La-modified $PbZrO_3$ thin films grown by sol-gel process on $Pt111/Ti/SiO_2/Si$ substrate. In: Journal of Applied Physics, 100 (4). 044102 (9 pages).

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Abstract

Highly 110 preferred orientated antiferroelectric $PbZrO_3$ (PZ) and La-modified PZ thin films have been fabricated on $Pt/Ti/SiO_2/Si$ substrates using sol-gel process. Dielectric properties, electric field induced ferroelectric polarization, and the temperature dependence of the dielectric response have been explored as a function of composition. The ${T_c}$ has been observed to decrease by \sim 17 °C per 1 mol % of La doping. Double hysteresis loops were seen with zero remnant polarization and with coercive fields in between 176 and 193 kV/cm at 80 °C for antiferroelectric to ferroelectric phase transformation. These slim loops have been explained by the high orientation of the films along the polar direction of the antiparallel dipoles of a tetragonal primitive cell and by the strong electrostatic interaction between La ions and oxygen ions in an $ABO_3$ perovskite unit cell. High quality films exhibited very low loss factor less than 0.015 at room temperature and pure PZ; 1 and 2 mol % La doped PZs have shown the room temperature dielectric constant of 135, 219, and 142 at the frequency of 10 kHz. The passive layer effects in these films have been explained by Curie constants and Curie temperatures. The ac conductivity and the corresponding Arrhenius plots have been shown and explained in terms of doping effect and electrode resistance.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 07 Dec 2006
Last Modified: 19 Sep 2010 04:32
URI: http://eprints.iisc.ernet.in/id/eprint/8785

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