Goswami, J and Raghunathan, L and Devi, A and Shivashankar, SA and Chandrasekaran, S (1996) Chemical vapour deposition of thin copper films using a new metalorganic precursor. In: Journal of Materials Science Letters, 15 (7). pp. 573-575.
Restricted to Registered users only
Download (545Kb) | Request a copy
Because of concerns about its reliability and its effects on the speed of electronic devices, serious questions have been raised regarding the adaptation of aluminium-based interconnection schemes to subhalf-micron level VSLI technology. With the downscaling of metal interconnect line widths, an increased electrical current density has resulted in greater RC delay along with enhanced electromigration and stress-induced void failures. An intense research effort has therefore been focused on copper metallization due to the lower resistivity (1.7 $\mu\Omega$ cm for Cu, versus 2.7 $\mu\Omega$ cm for A1) and better electromigration resistance achievable. Further, the demands in VLSI technology, such as conformal coverage, damage-free surface, and selective area deposition make chemical vapour deposition (CVD) a better alternative than processes like sputtering and evaporation.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Springer.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Chemical Sciences > Organic Chemistry
|Date Deposited:||12 Dec 2006|
|Last Modified:||19 Sep 2010 04:33|
Actions (login required)