Sreelakshmi, K and Satyam, M (1996) Estimation of low temperature characteristics of JFETs from their room-temperature characteristics. In: Cryogenics, 36 (5). pp. 325-331.
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With the advent of high-temperature superconductors, there seems to be a need to find active semiconductor devices that can be used with superconductors to construct hybrid circuits. One of the semiconductor devices that is well suited for low-temperature operation is the JFET. There has been some work carried out on JFETs at low temperatures, mostly to reduce the noise in amplifiers. But, there is no attempt to predict their characteristics at any low temperature knowing the room temperature characteristics. In our view, this is an important aspect that will enable the circuit designer to estimate the device behaviour at any low temperature and design the circuits appropriately. This paper reports an attempt to do this.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Keywords:||Low temperature;JFETs;Characteristics;Room temperature|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||12 Dec 2006|
|Last Modified:||19 Sep 2010 04:33|
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