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Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown $Eu_2O_3$ films on Si(100)

Singh, MP and Shalini, K and Shivashankar, SA and Deepak, GC and Bhat, N (2006) Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown $Eu_2O_3$ films on Si(100). In: Applied Physics Letters, 89 (20). 201901-(1-3).

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Abstract

Structural and electrical properties of $Eu_2O_3$ films grown on Si(100) in 500–600 °C temperature range by low pressure metalorganic chemical vapor deposition are reported. As-grown films also possess the impurity $Eu_{1-x}O$ phase, which has been removed upon annealing in $O_2$ ambient. Film’s morphology comprises uniform spherical mounds 40–60 nm. Electrical properties of the films, as examined by capacitance-voltage measurements, exhibit fixed oxide charges in the range of $-1.5\times10^{11}$ to $-6.0\times10^{10} cm^{-2}$ and dielectric constant in the range of 8–23. Annealing has resulted in drastic improvement of their electrical properties. Effect of oxygen nonstoichiometry on the film’s property is briefly discussed.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 27 Feb 2007
Last Modified: 19 Sep 2010 04:33
URI: http://eprints.iisc.ernet.in/id/eprint/9091

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