Bhattacharjee, Subhro and Sengupta, K (2006) Tunneling Conductance of Graphene NIS Junctions. In: Physical Review Letters, 97 (21). 217001-1-4.
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We show that, in contrast with conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region, in the limit of a thin barrier. The amplitude of these oscillations is maximum for aligned Fermi surfaces of the normal and superconducting regions and vanishes for a large Fermi surface mismatch. The zero-bias tunneling conductance, in sharp contrast to its counterpart in conventional NIS junctions, becomes maximum for a finite barrier strength. We also suggest experiments to test these predictions.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to The American Physical Society.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||19 Dec 2006|
|Last Modified:||19 Sep 2010 04:33|
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