Devi, Anjana and Shivashankar, SA (1998) Thermal chemical vapour deposition of copper films from copper ethylacetoacetate: microstructure and electrical resistivity. In: Journal of Materials Science Letters, 17 (5). pp. 367-369.
Full text not available from this repository. (Request a copy)Abstract
Thin copper films were deposited through the hydrogen reduction of a non-fluorinated precursor $Cu(etaoac)_2$ at temperatures as low as 225°C by thermal CVD. The copper films obtained were very dense, consisting of very small grains, and adhered strongly to the underlying $SiO_2$ substrate. The resistivity of the films was close to its value in bulk copper at a thickness as small as 95 nm.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright of this article belongs to Springer Netherlands. |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 27 Dec 2006 |
| Last Modified: | 27 Aug 2008 12:30 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/9204 |
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