Devi, Anjana and Shivashankar, SA (1998) Thermal chemical vapour deposition of copper films from copper ethylacetoacetate: microstructure and electrical resistivity. In: Journal of Materials Science Letters, 17 (5). pp. 367-369.Full text not available from this repository. (Request a copy)
Thin copper films were deposited through the hydrogen reduction of a non-fluorinated precursor $Cu(etaoac)_2$ at temperatures as low as 225°C by thermal CVD. The copper films obtained were very dense, consisting of very small grains, and adhered strongly to the underlying $SiO_2$ substrate. The resistivity of the films was close to its value in bulk copper at a thickness as small as 95 nm.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Springer Netherlands.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||27 Dec 2006|
|Last Modified:||27 Aug 2008 12:30|
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