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Thermal chemical vapour deposition of copper films from copper ethylacetoacetate: microstructure and electrical resistivity

Devi, Anjana and Shivashankar, SA (1998) Thermal chemical vapour deposition of copper films from copper ethylacetoacetate: microstructure and electrical resistivity. In: Journal of Materials Science Letters, 17 (5). pp. 367-369.

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Abstract

Thin copper films were deposited through the hydrogen reduction of a non-fluorinated precursor $Cu(etaoac)_2$ at temperatures as low as 225°C by thermal CVD. The copper films obtained were very dense, consisting of very small grains, and adhered strongly to the underlying $SiO_2$ substrate. The resistivity of the films was close to its value in bulk copper at a thickness as small as 95 nm.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Springer Netherlands.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 27 Dec 2006
Last Modified: 27 Aug 2008 12:30
URI: http://eprints.iisc.ernet.in/id/eprint/9204

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