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The dielectric and electrical properties of four layered $LaBi_4 FeTi_3 O_{15}$

James, AR and Kumar, GS and Suryanarayana, SV and Bhimasankaram, T (1998) The dielectric and electrical properties of four layered $LaBi_4 FeTi_3 O_{15}$. In: Ferroelectrics, 216 (1-4). pp. 11-26.

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Abstract

A four layered compound LaBi/sub 4/FeTi/sub 3/O/sub 15/ has been synthesised by the ceramic route. Polycrystalline samples were prepared by uniaxial pressing and cold isostatic pressing with a view to study the effect of different compaction techniques on the physical properties of the compound. The lattice parameters were evaluated and the compound was found to have an orthorhombic symmetry. A.C. impedance techniques have been used to characterise the material. The impedance response, the bulk dielectric constant and the ferroelectric transition temperatures are presented. The transitions observed in both cases were of a diffusive type. The dielectric data is interpreted vis-a-vis the crystal chemistry of analogous bismuth layer-structured ferroelectrics.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Gordon & Breach.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 07 Mar 2007
Last Modified: 27 Aug 2008 12:34
URI: http://eprints.iisc.ernet.in/id/eprint/9543

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