Rao, KSRK and Sreedhar, AK and Bhat, HL and Singh, RA and Dubey, GC and Kumar, Vikram (1996) Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates. In: Applied Physics Letters, 68 (11). pp. 1458-1460.
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Fine structure has been observed in the 1.4 eV luminescence band of thin (\approx100 \AA) amorphous silicon (a-Si:H) layers deposited on silicon substrates. The energy separation between the peaks is \approx 20 meV. A similar luminescence band observed in layers grown on glass substrates under the same conditions is several orders of magnitude lower in intensity and is without perceptible fine structure. There is no change in the nature of the fine structure and the peak energies in films deposited at different substrate temperatures (150–300°C). The dependence of the luminescence band on illumination intensity and on temperature has also been measured. This indicates probable excitonic nature of the luminescence. Possible causes for the observed phenomena are discussed.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||09 Mar 2007|
|Last Modified:||19 Sep 2010 04:34|
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