Bhatiacharyya, S and Kanjilal, D and Sayeed, A and Meenakshi, V and Subramanyam, SV (1996) Electronic properties of ion irradiated amorphous carbon films prepared by plasma assisted CVD method. In: Vacuum, 47 (11). pp. 1285-1288.
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Amorphous hydrogenated carbon films were prepared by plasma assisted CVD method. Their de conductivity was studied as a function of temperature in the range of 300 K to 10 K. films were then subjected to high energy (170 MeV) ion irradiation. After irradiation a marked change was observed in the conductivity and its temperature dependence. The conductivity decreased by 2-3 orders of magnitude and a gap appeared in the electronic structure. UPS studies of the material show a decrease in the \pi states of the electronic density of states spectrum. A change in the C1s peak shape was observed in XPS study of the irradiated carbon film.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||14 Mar 2007|
|Last Modified:||16 Jul 2012 12:19|
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