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Electronic properties of ion irradiated amorphous carbon films prepared by plasma assisted CVD method

Bhatiacharyya, S and Kanjilal, D and Sayeed, A and Meenakshi, V and Subramanyam, SV (1996) Electronic properties of ion irradiated amorphous carbon films prepared by plasma assisted CVD method. In: Vacuum, 47 (11). pp. 1285-1288.

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Official URL: http://dx.doi.org/10.1016/S0042-207X(96)00171-6

Abstract

Amorphous hydrogenated carbon films were prepared by plasma assisted CVD method. Their de conductivity was studied as a function of temperature in the range of 300 K to 10 K. films were then subjected to high energy (170 MeV) ion irradiation. After irradiation a marked change was observed in the conductivity and its temperature dependence. The conductivity decreased by 2-3 orders of magnitude and a gap appeared in the electronic structure. UPS studies of the material show a decrease in the \pi states of the electronic density of states spectrum. A change in the C1s peak shape was observed in XPS study of the irradiated carbon film.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 14 Mar 2007
Last Modified: 16 Jul 2012 12:19
URI: http://eprints.iisc.ernet.in/id/eprint/9729

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