Gurumurthy, Suma and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumar, Vikram (1996) Shallow donor neutralization in CdTe:In by atomic hydrogen. In: Applied Physics Letters, 68 (17). pp. 2424-2426.
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Passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma are studied by electrical and photoluminescence measurements and were found to be maximum at about 150°C. Depth profiling by capacitance-voltage measurements show passivation of approximately an order of magnitude at 150°C and 50% at 170°C. No visual surface damage is seen. Reverse bias annealing experiments show that atomic hydrogen drifts in a charged state in n-CdTe, with reactivation kinetics of the donors different from the other well studied semiconductors. Manifestation of the donor passivation in photoluminescence is seen by the reduction of the donor bound luminescence.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||14 Mar 2007|
|Last Modified:||19 Sep 2010 04:35|
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