Murugavel, S and Acharya, KV and Asokan, S (1995) Pressure-induced metallization in Al-As-Te glasses. In: Journal of Non-Crystalline Solids, 191 (3). pp. 327-330.
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Electrical resistivity measurements have been undertaken on bulk Al-As-Te glasses at pressures up to 8 GPa and to 80K in a Bridgman anvil setup. The samples have been found to show a continuous decrease in resistivity with increasing pressures. The activation energy of electrical conduction is also found to decrease monotonically, indicating a pressure-induced semiconductor-metal transformation in Al-As-Te glasses. The metallization pressures of Al-As-Te samples increase with increasing Al content. The high-pressure metallic phases of Al-As-Te samples are found to be amorphous. The results show that the high-pressure behaviour of Al-As-Te glasses are closer to that of As-Te glasses than to that of Al-Te glasses.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||21 Mar 2007|
|Last Modified:||23 Feb 2012 08:56|
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