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Large deviation from Matthiessen’s rule in chemical vapour deposited copper films and its correlation with nanostructure

Ramaswamy, Geetha and Raychaudhuri, AK and Goswami, Jaydeb and Shivashankar, SA (1997) Large deviation from Matthiessen’s rule in chemical vapour deposited copper films and its correlation with nanostructure. In: Journal of Physics D: Applied Physics, 30 (5). L5-L9.

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Abstract

The resistivity $(\rho)$ of copper films grown by varying the pressure, and hence the growth rate, in metalorganic chemical vapour deposition has been studied in the temperature range 4.2 K–300 K. The films exhibit a fairly high $\rho$(300 K) of 8–20 $\mu \Omega$ cm. Analysis of the temperature variation of $\rho$ shows that the high $\rho$ values are not just caused by elastic scattering from the impurities but the temperature dependence of $\rho$ is also very high, resulting in a large deviation from Matthiessen’s rule (DMR) in these films. This strong dependence on temperature and DMR has been explained in a semi-quantitative manner as arising from grain boundary (GB) and surface scattering (SS). This is corroborated by STM studies on the films which show that films having a smooth surface and well connected grains have a lower $\rho$ as opposed to films with poor connectivity.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 30 Mar 2007
Last Modified: 19 Sep 2010 04:35
URI: http://eprints.iisc.ernet.in/id/eprint/9964

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