Ramaswamy, Geetha and Raychaudhuri, AK and Goswami, Jaydeb and Shivashankar, SA (1997) Large deviation from Matthiessen’s rule in chemical vapour deposited copper films and its correlation with nanostructure. In: Journal of Physics D: Applied Physics, 30 (5). L5-L9.
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The resistivity $(\rho)$ of copper films grown by varying the pressure, and hence the growth rate, in metalorganic chemical vapour deposition has been studied in the temperature range 4.2 K–300 K. The films exhibit a fairly high $\rho$(300 K) of 8–20 $\mu \Omega$ cm. Analysis of the temperature variation of $\rho$ shows that the high $\rho$ values are not just caused by elastic scattering from the impurities but the temperature dependence of $\rho$ is also very high, resulting in a large deviation from Matthiessen’s rule (DMR) in these films. This strong dependence on temperature and DMR has been explained in a semi-quantitative manner as arising from grain boundary (GB) and surface scattering (SS). This is corroborated by STM studies on the films which show that films having a smooth surface and well connected grains have a lower $\rho$ as opposed to films with poor connectivity.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||30 Mar 2007|
|Last Modified:||19 Sep 2010 04:35|
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