Venkataraghavan, R and Rao, KSRK and Bhat, HL (1997) The effect of growth parameters on the position of the melt–solid interface in Bridgman growth of indium antimonide. In: Journal of Physics D: Applied Physics, 30 (17). L61-L63.
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The effect of growth parameters on the position of the interface in the melt growth of indium antimonide by vertical solidification has been studied. It has been observed that the interface deviates from the expected position of the melting-point isotherm. It was found that the growth parameters play a vital role in moving the S/L interface on either side of the melting-point isotherm, suggesting that the growth occurs under off-stoichiometric conditions. By choosing the optimized growth conditions, it has been possible to grow InSb single crystals with stoichiometric composition.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||29 Mar 2007|
|Last Modified:||19 Sep 2010 04:35|
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