ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Browse by Author

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 9.

Journal Article

Majumdar, Amlan and Balasubramanian, Sathya and Venkataraman, V and Balasubramanian, N (1997) Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal. In: Journal of Applied Physics, 82 (1). 192-195 .

Balasubramanian, Sathya and Rao, Koteswara KSR and Balasubramanian, N and Kumar, Vikram (1995) Effect of hydrogenation and thermal annealing on the photoluminescence of p-InP. In: Journal of Applied Physics, 77 (10). pp. 5398-5405.

Balasubramanian, Sathya and Balasubramanian, N and Kumar, Vikram (1995) Reactivation kinetics of acceptors in hydrogenated InP during unbiased annealing. In: Physical Review B: Condensed Matter, 51 (3). pp. 1536-1540.

Balasubramanian, Sathya and Kumar, Vikram (1995) Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy. In: MRS Proceedings, 378 .

Balasubramanian, Sathya and Gopinath, CS and Subramanian, S and Balasubramanian, N (1994) Exposure of InP to hydrogen plasma in the presence of -a 'sacrificial' InP-an x-ray photoelectron spectroscopic study. In: Semiconductor Science and Technology, 9 (9). pp. 1604-1607.

Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N and Premachandran, V (1994) Resistance switching in indium phosphide using hydrogen passivation of acceptors. In: Applied Physics Letters, 64 (17). pp. 2256-2257.

Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N (1994) Reduced phosphorus loss from InP surface during hydrogen plasma treatment. In: Applied Physics Letters, 64 (13). pp. 1696-1698.

Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N (1993) Reverse-bias annealing kinetics of Mg-H complexes in InP. In: Journal of Applied Physics, 74 (7). pp. 4521-4526.

Balasubramanian, Sathya and Kumar, V (1992) Properties of GaAs:V grown by liquid phase epitaxy. In: Semiconductor Science and Technology, 74 (8). pp. 1117-1118.

This list was generated on Thu Jul 31 03:26:32 2014 IST.