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Number of items: 5.

Journal Article

Balasubramanyam, N and Kumar, Vikram (1988) System effects in double‐channel gated‐integrator‐based deep‐level transient spectroscopy. In: Journal of Applied Physics, 64 (11). 6311 -6314.

Balasubramanyam, N and Kumar, V (1987) On the Quenched-In Defects in n-Type Silicon. In: Physica Status Solidi A: Applied Research, 100 (1). pp. 239-244.

Balasubramanyam, N and Kumar, Vikram (1987) Pressure Dependence of Barrier Heights of Schottky Contacts on Silicon. In: Physica Status Solidi A: Applied Research, 101 (1). K29-K32.

Mohapatra, YN and Balasubramanyam, N and Kumar, Vikram (1985) Characterization of deep levels in semi-insulating gallium arsenide. In: Bulletin of Materials Science, 7 (1). pp. 57-61.

Editorials/Short Communications

Pinjare, SL and Balasubramanyam, N and Kumar, Vikram (1989) Photoluminescence at 0.944 eV from heat-treated n-type silicon. In: Physica Status Solidi A, 113 (2). K261-K264.

This list was generated on Fri Oct 31 13:44:15 2014 IST.