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Number of items: 15.

Conference Paper

Medury, Aditya Sankar and Bhat, Navakanta and Bhat, KN (2011) Temperature dependence of threshold voltage for ultra thin silicon film symmetric double-gate MOSFETs. In: International Workshop on Physics of Semiconductor Devices, 19-22 Dec, 2011, Indian Institute of Technology Kanpur.

Medury, AdityaSankar and Majumdar, Kausik and Bhat, Navakanta and Bhat, KN (2010) A Compact Model incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs. In: 3rd IEEE International Nanoelectronics Conference, JAN 03-08, 2010 , City Univ Hong Kong, pp. 1134-1135.

Anand, S and Bhat, Navakanta and Bhat, KN and Mohan, S (2009) A Surface Modification Process for Lift-Off Applications using Direct Write Laser Lithography. In: Proc. of International Conference on MEMS 2009 .

Bhat, KN and Naseer, Babu P (2007) 'Wet N2O oxidation' process and interface state density characterization of nanoscale nitrided SiO2 for flash memory application. In: 14th International Workshop on the Physics of Semiconductor Devices, DEC 17-20, 2007, Mumbai.

Journal Article

Kumar, Vijay and Bhat, KN and Sharma, Niti Nipun (2014) Surface modification of textured silicon and its wetting behaviour. In: JOURNAL OF ADHESION SCIENCE AND TECHNOLOGY, 29 (4). pp. 308-318. (In Press)

Chandrasekar, Hareesh and Mohan, Nagaboopathy and Bardhan, Abheek and Bhat, KN and Bhat, Navakanta and Ravishankar, N and Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. In: Applied Physics Letters, 103 (21). 211902_1-211902_.

Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2013) Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET). In: JOURNAL OF APPLIED PHYSICS, 114 (1).

Sridharan, Sindhuja and Bhat, Navakanta and Bhat, KN (2013) Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching. In: APPLIED PHYSICS LETTERS, 102 (2).

Daniel, Joseph R and Bhat, KN (2013) Threshold voltage model for accumulation mode polycrystalline SOI MOSFETs and comparisons with experimental results. In: MICROELECTRONIC ENGINEERING, 103 . pp. 79-85.

Murali, Pramod and Ranjit, K and Bhat, Navakanta and Banerjee, Gaurab and Amrutur, Bharadwaj and Bhat, KN and Ramamurthy, Praveen C (2012) A CMOS Gas Sensor Array Platform With Fourier Transform Based Impedance Spectroscopy. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 59 (11). pp. 2507-2517.

Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2012) Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor. In: Journal of Applied Physics, 112 (2).

Thathachary, Arun V and Bhat, KN and Bhat, Navakanta and Hegde, MS (2010) Fermi level depinning at the germanium Schottky interface through sulfur passivation. In: Applied Physics Letters, 96 (15).

Babu, Naseer P and Govind, G and Prasad, SMS and Bhat, KN (2007) Electrical and Reliability Studies of "Wet $N_2O$" Tunnel Oxides Grown on Silicon for Flash Memory Applications. In: IEEE Transactions on Device and Materials Reliability, 7 (3). pp. 420-428.

Bhat, KN and Gupta, Das A and Rao, PRS and Gupta, Das N and Bhattacharya, E and Sivakumar, K and Kumar, Vinoth V and Anitha, Helen L and Joseph, JD and Madhavi, SP and Natarajan, K (2007) Wafer bonding - A powerful tool for MEMS. In: Indian Journal of Pure and Applied Physics, 45 (4). pp. 311-316.

Editorials/Short Communications

Bhat, KN (2016) SPECIAL ISSUE INTRODUCTION 2nd IEEE International Conference on Emerging Electronics (ICEE). In: IETE TECHNICAL REVIEW, 33 (1, SI). p. 1.

This list was generated on Sat Apr 30 03:51:42 2016 IST.