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Number of items: 18.

Conference Proceedings

Prakash, P and Renilkumar, M and Venkatesh, C and Faraone, L and Umama-Membreno, GA and Silva, KKMBD and Keating, A and Martyniuk, M and Dell, JM and Varma, MM and Bhat, N and Pratap, R (2012) Optical read-out scheme based on Grated Waveguide Cantilever cavity resonance for interrogation of cantilever sensor arrays. In: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) , DEC 11-14, 2012 , Univ Melbourne, Sch Phys, Melbourne, AUSTRALIA, pp. 69-70.

Conference Paper

Venkatesh, C and Singh, PP and Renilkumar, M and Varma, M and Bhat, N and Pratap, R and Martyniuk, M and Keating, A and Umama-Membreno, GA and Silva, KKMBD and Dell, JM and Faraone, L (2012) Effect of FIB milling on MEMS SOI cantilevers. In: 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), 12-14 Dec. 2012, Melbourne, VIC.

Singh, MP and Thakur, CS and Shalini, K and Shripathi, T and Bhat, N and Shivashankar, SA (2004) A comparative study of erbium oxide and gadolinium oxide high-k dielectric thin films grown by low-pressure metalorganic chemical vapour deposition (MOCVD) using beta-Diketonates as precursors. In: 2nd International Symposium on High Dielectrics Constant Materials, OCT 12-16, 2003, Orlando, FL.

Srinivasan, R and Bhat, N (2003) Effect of scaling on the non-quasi-static behaviour of the MOSFET for RF ICs. In: Proceedings of the 16th International Conference on VLSI Design (VLSI’03), 4-8 Jan. 2003, New Delhi, India.

Singh, MP and Thakur, CS and Bhat, N and Shivashankar, SA (2003) A Study of $Al_2O_3$ :C Films on Si(100) Grown by Low Pressure MOCVD. In: Novel Materials and Processes for Advanced CMOS. Symposium, Novel Materials and Processes for Advanced CMOS. Symposium, Boston, MA, USA, pp. 349-54.

Journal Article

Majumdar, K and Majhi, P and Bhat, N and Jammy, R (2010) HFinFET: A Scalable, High Performance, Low Leakage Hybrid n-Channel FET. In: IEEE Transactions on Nanotechnology, 9 (3). pp. 342-344.

Singh, MP and Shalini, K and Shivashankar, SA and Deepak, GC and Bhat, N and Shripathi, T (2008) Microstructure, crystallinity, and properties of low-pressure MOCVD-grown europium oxide films. In: Materials Chemistry and Physics, 110 (2-3). pp. 337-343.

Venkatesh, C and Bhat, N (2008) Reliability Analysis of Torsional MEMS Varactor. In: IEEE Transactions on Device and Materials Reliability, 8 (1). pp. 129-134.

Singh, MP and Shalini, K and Shivashankar, SA and Deepak, GC and Bhat, N (2006) Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown $Eu_2O_3$ films on Si(100). In: Applied Physics Letters, 89 (20). 201901-(1-3).

Singh, MP and Shalini, K and Shivashankar, SA and Deepak, GC and Bhat, N (2006) Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100). In: Applied Physics Letters, 89 (20). 201901 -201901.

Gupta, AK and Bhat, N (2005) Asymmetric cross-coupled differential pair configuration to realize neuron activation function and its derivative. In: IEEE Transactions on Circuits and Systems Part II: Analog and Digital Signal Processing, 52 (1). pp. 10-13.

Singh, MP and Thakur, CS and Shalini, K and Banerjee, S and Bhat, N and Shivashankar, SA (2004) Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition. In: Journal of Applied Physics, 96 (10). pp. 5631-5637.

Sudha, T and Vedavathy, TS and Bhat, N (2004) Wideband single-fed circularly polarised patch antenna. In: Electronics Letters, 40 (11). pp. 648-649.

Bhat, N (2004) MEMS for RF applications. In: IETE Technical Review, 21 (2). pp. 133-136.

Singh, MP and Thakur, CS and Shalini, K and Bhat, N and Shivashankar, SA (2003) Structural and electrical characterization of erbium oxide films grown on Si(100) by low-pressure metalorganic chemical vapor deposition. In: Applied Physics Letters, 83 (14). pp. 2889-2891.

Saxena, PK and Bhat, N (2003) Process technique for SEU reliability improvement of deep sub-micron SRAM cell. In: Solid-State Electronics, 47 (4). pp. 661-664.

Maitra, K and Bhat, N (2003) Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs. In: Solid-State Electronics, 47 (1). pp. 15-17.

Singh, MP and Thakur, CS and Bhat, N and Shivashankar, SA (2002) A study of Al2O3:C films on Si(100) grown by low pressure MOCVD. In: MRS Proceedings, 745 . N9.2 -T7.2.

This list was generated on Tue Sep 30 16:31:38 2014 IST.