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Conference Proceedings

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011 , Kanpur, INDIA.

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Wurtzite InN nanodots on Si(100) by molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011, Kanpur, INDIA.

Journal Article

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2013) Substrate impact on the growth of InN nanostructures by droplet epitaxy. In: Physica Status Solidi (c), 10 (3). pp. 409-412.

Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kumar, Mahesh and Krupanidhi, SB (2013) Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction. In: Journal of Nanoscience and Nanotechnology, 13 (1). pp. 498-503.

Rajpalke, Mohana K and Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Krupanidhi, SB (2013) Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire. In: Physica Status Solidi C - Current Topics in Solid State Physics, 10 (3). pp. 381-384.

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Kalghatgi, AT and Krupanidhi, SB (2012) Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE. In: Journal of Crystal Growth, 354 (1). pp. 208-211.

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 152 (18). pp. 1771-1775.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE. In: MATERIALS RESEARCH BULLETIN, 47 (6). pp. 1306-1309.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (5). pp. 994-997.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy. In: THIN SOLID FILMS, 520 (15). pp. 4911-4915.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kalghatgi, AT and Krupanidhi, SB (2012) Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE. In: Journal of Alloys and Compounds, 513 . pp. 6-9.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy. In: Japanese Journal of Applied Physics, 51 (2).

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy. In: Physica Status Solidi B, 249 (1). pp. 58-61.

Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (8). pp. 1575-1578.

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB (2012) Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction. In: Journal of Applied Physics, 112 (2).

Kumar, Mahesh and Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions. In: CURRENT APPLIED PHYSICS, 13 (1). pp. 26-30.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2012) Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy. In: APPLIED PHYSICS EXPRESS, 5 (8).

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB and Sinha, Neeraj (2011) Evidences for ambient oxidation of indium nitride quantum dots. In: Physica Status Solidi B, 248 (12). pp. 2853-2856.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kalghatgi, Ajit T and Krupanidhi, SB (2011) Transport and infrared photoresponse properties of InN nanorods/Si heterojunction. In: Nanoscle Research Letters, 6 .

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB (2011) Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy. In: Journal of Applied Physics, 110 (9).

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Kalghatgi, AT and Krupanidhi, SB and Kumar, Nitesh and Sundaresan, A (2011) Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films. In: Applied Physics Letters, 99 (16).

Kumar, Mahesh and Roul, Basanta and Shetty, Arjun and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate. In: Applied Physics Letters, 99 (15).

Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 151 (20). pp. 1420-1423.

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes. In: Journal of Applied Physics, 110 (6).

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Study of band offsets in InN/Ge heterojunctions. In: Surface Science, 605 (15-16). L33-L37.

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Dash, S and Tyagi, AK and Kalghatgi, AT and Krupanidhi, SB (2011) Reduction of oxygen impurity at GaN/beta-Si(3)N(4)/Si interface via SiO(2) to Ga(2)O conversion by exposing of Si surface under Ga flux. In: Journal of Crystal Growth, 327 (1). pp. 272-275.

Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Bhat, Thirumaleshwara N and Sinha, Neeraj and Krupanidhi, SB (2011) Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. In: Scripta Materialia, 65 (1). pp. 33-36.

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE. In: Journal of Luminescence, 131 (4). pp. 614-619.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE. In: Journal of Nanoparticle Research, 13 (3). pp. 1281-1287.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Negative differential capacitance in n-GaN/p-Si heterojunctions. In: Solid State Communications, 151 (5). pp. 356-359.

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. In: Journal of Applied Physics, 109 (4).

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kumar, Mahesh and Misra, P and Kukreja, LM and Sinha, Neeraj and Krupanidhi, SB (2011) Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE. In: Journal of Crystal Growth, 314 (1). pp. 5-8.

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE. In: Applied Surface Science, 257 (6). pp. 2107-2110.

Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Krupanidhi, SB and Sinha, Neeraj (2011) Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy. In: Journal of Applied Physics, 109 (12). p. 123707.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2011) Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes. In: Journal of Nanomaterials .

Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kalghatgi, AT and Krupanidhi, SB (2011) Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy. In: Journal of Applied Physics, 110 (11). 114317 -114317.

Kumari, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhib, SB (2010) Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy. In: Advanced Science Letters, 3 (4). pp. 379-384.

Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kumar, Mahesh and Krupanidhi, SB and Sinha, Neeraj (2010) Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures. In: Applied Physics Letters, 97 (20).

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE. In: Materials Research Bulletin, 45 (11). pp. 1581-1585.

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy. In: Nanoscience and Nanotechnology Letters, 2 (3). pp. 257-260.

This list was generated on Fri Aug 22 05:55:14 2014 IST.