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Number of items: 12.

Journal Article

Pal, S and Bose, DN and Asokan , S and Gopal, ESR (1991) Anisotropic properties of the layered semiconductor in Te. In: Solid State Communications, 80 (9). pp. 753-756.

Mazumdar, D and Bose, DN and Parthasarathy, G and Gopal, SR (1987) High-pressure studies on lithium fast-ion conductors. In: Journal of Materials Research, 2 (3). pp. 366-373.

Bose, DN and Seishu, B and Parthasarathy, G and Gopal, ESR (1986) Doping Dependence of Semiconductor-Metal Transition in InP at High Pressures. In: Proceedings of the Royal Society A: Mathematical, Physical & Engineering Sciences, 405 (1829). pp. 345-353.

Sen, S and Bose, DN and Hegde, MS (1985) Plasmon Energies and Dielectric Constants of the III-VI Semiconductors In2Te3 and Ga2Te3. In: physica status solidi (b), 129 (1). K65 -K67.

Bose, DN and Parthasarathy, G and Mazumdar, D and Gopal, ESR (1984) Resistivity Maxima in Lithium Fast-Ion Conductors at High Pressure. In: Physical Review Letters, 53 (14). pp. 1368-1371.

Bose, DN and Jani, BJ (1979) Thin film amorphous semiconductor microwave switches. In: Thin Solid Films, 57 (1). pp. 39-44.

Govindacharyulu, PA and Bose, DN (1979) Photoconductivity in β-AgI. In: Physical Review B: Condensed Matter, 19 (12). 6532-6541 .

Govindacharyulu, PA and Bose, DN (1979) Silver iodide growth, electrical and optical-properties. In: Indian Journal of Physics A and Proceedings of the Indian Association for the Cultivation of Science A, 53 (1-2). pp. 191-196.

Govindacharyulu, PA and Bose, DN and Suri, SK (1978) Ionic conductivity and dielectric measurements in single crystal β---AgI. In: Journal of Physics and Chemistry of Solids, 39 (9). 961 -966.

Bose, DN and Jani, BJ (1977) Microwave modulation by amorphous-semiconductor switches. In: Electronics Letters, 13 (16). 451 -452.

Govindacharyulu, PA and Bose, DN (1977) Drift mobility of holes in single-crystal beta-AgI. In: Journal of Applied Physics, 48 (3). pp. 1381-1382.

Katti, VR and Govindacharyulu, PA and Bose, DN (1972) Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films. In: Thin Solid Films, 14 (1). pp. 143-148.

This list was generated on Thu Nov 27 06:38:12 2014 IST.