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Number of items: 23.

Conference Paper

Dutta, PS and Bhat, HL and Kumar, V (1996) Effect of hydrogenation on the electrical and optical properties of GaSb. In: Symposium A – Ion-Solid Interactions for Materials Modification and Processing, 27 Nov.-1 Dec. 1995, Boston, MA, USA, pp. 533-538.

Journal Article

Pal, U and Piqueras, J and Dutta, PS and Bhat, HL and Dubey, GC and Kumar, Vikram and Dieguez, E (2008) Cathodoluminescence Spectroscopy For Evaluation Of Defect Passivation In GaSb. In: MRS Proceedings, 42 (1). pp. 92-99.

Dutta, PS and Bhat, HL and Kumar, V (1997) The physics and technology of gallium antimonide: An emerging optoelectronic material. In: Journal of Applied Physics, 81 (9). pp. 5821-5870.

Dutta, PS and Prasad, V and Bhat, HL and Kumar, Vikram (1996) Carrier compensation and scattering mechanisms in p-GaSb. In: Journal of Applied Physics, 80 (5). pp. 2847-2853.

Dutta, PS and Mendez, B and Piqueras, J and Diegueza, E and Bhat, HL (1996) Nature of compensating luminescence centers in Te-diffused and -doped GaSb. In: Journal of Applied Physics, 80 (2). pp. 1112-1115.

Dutta, PS and Bhat, HL and Kumar, Vikram (1996) Modelling Temperature Distribution in Cylindrical Crystal Growth Furnaces. In: International Communications in Heat and Mass Transfer, 23 (3). pp. 377-386.

Dutta, PS and Sreedhar, AK and Bhat, HL and Dubey, GC and Kumar, V and Dieguez, E and Pal, U and Piqueras, J (1996) Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment. In: Journal of Applied Physics, 79 (6). pp. 3246-3252.

Dutta, PS and Marin, C and Dieguez, E and Bhat, HL (1996) Compositional mapping of GaSb wafers from as-grown crystals and after post-growth annealing treatments. In: Journal of Crystal Growth, 160 (3-4). pp. 207-210.

Dutta, PS and Bhat, HL and Kumar, Vikram and Sochinskii, NV and Dieguez, E (1996) Influence of arsenic concentration on the surface morphology and photoluminescence of LPE grown A1GaAsSb/GaSb with high aluminium content. In: Journal of Crystal Growth, 160 (1-2). pp. 177-180.

Panin, GN and Dutta, PS and Piqueras, J and Dieguez, E (1995) p- to n-type conversion in GaSb by ion beam milling. In: Applied Physics Letters, 67 (24). pp. 3584-3586.

Dutta, PS and Bhat, HL and Kumar, Vikram (1995) Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects. In: Bulletin of Materials Science, 18 (7). pp. 865-874.

Mendez, B and Dutta, PS and Piqueras, J and Dieguez, E (1995) Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide. In: Applied Physics Letters, 67 (18). pp. 2648-2650.

Dutta, PS and Bhat, HL and Kumar, Vikram (1995) Numerical analysis of melt-solid interface shapes and growth rates of gallium antimonide in a single-zone vertical Bridgman furnace. In: Journal of Crystal Growth, 154 (3-4). pp. 213-222.

Dutta, PS and Sreedhar, AK and Bhat, HL and Dubey, GC and Kumar, Vikram and Dieguez, E (1995) Current transport properties of metal/hydrogenated amorphous silicon/GaSb structures. In: Applied Physics Letters, 67 (7). pp. 1001-1003.

Dutta, PS and Rao, Koteswara KSR and Bhat, HL and Kumar, V (1995) Photolumineseence studies in bulk gallium antimonide. In: Applied Physics A: Materials Science & Processing, 61 (2). pp. 149-152.

Dutta, PS and Rao, Koteswara KSR and Bhat, HL and Naik, Gopalakrishna K and Kumar, V (1995) Surface morphology, electrical and optical properties of gallium antimonide layers grown by liquid phase epitaxy. In: Journal of Crystal Growth, 152 (1-2). pp. 14-20.

Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1995) Electrical characterization of surface defects in GaSb created by hydrogen plasma. In: Applied Physics Letters, 66 (15). pp. 1986-1988.

Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1995) Optical and electrical properties of hydrogen-passivated gallium antimonide. In: Physical Review B: Condensed Matter, 51 (4). pp. 2153-2158.

Dutta, PS and Bhat, HL and Kumar, Vikram and Dieguez, E (1995) Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb and AlGaAsSb. In: MRS Proceedings, 399 . p. 153.

Dutta, PS and Sangunni, KS and Bhat, HL (1994) Sulphur passivation of gallium antimonide surfaces. In: Applied Physics Letters, 65 (13). pp. 1695-1697.

Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1994) Experimental determination of melt-solid interface shapes and actual growth rates of gallium antimonide grown by vertical Bridgman method. In: Journal of Crystal Growth, 141 (3-4). pp. 476-478.

Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1994) Growth of gallium antimonide by vertical Bridgman technique with planar crystal-melt interface. In: Journal of Crystal Growth, 141 (1-2). pp. 44-50.

Editorials/Short Communications

Dutta, PS and Rao, Koteswara KSR and Bhat, HL and Kumar, Vikram (1995) Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide. In: Journal of Applied Physics, 77 (9). 4825-4827 .

This list was generated on Tue Sep 17 21:51:16 2019 IST.