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Number of items: 13.

Bhattacharjee, Shubhadeep and Vatsyayan, Ritwik and Ganapathi, Kolla Lakshmi and Ravindra, Pramod and Mohan, Sangeneni and Bhat, Navakanta (2019) Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2. In: ADVANCED ELECTRONIC MATERIALS, 5 (6).

Chandrasekar, Hareesh and Kumar, Sandeep and Ganapathi, Kolla Lakshmi and Prabhu, Shreesha and Bin Dolmanan, Surani and Tripathy, Sudhiranjan and Raghavan, Srinivasan and Bhat, KN and Mohan, Sangeneni and Muralidharan, Rangarajan and Bhat, Navakanta and Nath, Digbijoy N (2018) Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (9). pp. 3711-3718.

Jithin, MmA and Ganapathi, Kolla Lakshmi and Vikram, G N V R and Udayashankar, N K and Mohan, S (2018) Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices. In: SENSORS AND ACTUATORS A-PHYSICAL, 272 . pp. 199-205.

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Chandrasekar, Hareesh and Paul, Tathagata and Mohan, Sangeneni and Ghosh, Arindam and Raghavan, Srinivasan and Bhat, Navakanta (2017) Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs. In: ADVANCED ELECTRONIC MATERIALS, 3 (1).

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Bhat, Navakanta (2017) Realizing P-FETs and Photodiodes on MoS2 through area-selective p-Doping via Vacancy Engineering. In: 75th Annual Device Research Conference (DRC), JUN 25-28, 2017, Univ Notre Dame, South Bend, IN.

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Mohan, Sangeneni and Bhat, Navakanta (2017) A sub-thermionic MoS2 FET with tunable transport. In: APPLIED PHYSICS LETTERS, 111 (16).

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Mohan, Sangeneni and Bhat, Navakanta (2017) A sub-thermionic MoS2 FET with tunable transport. In: APPLIED PHYSICS LETTERS, 111 (16).

Ganapathi, Kolla Lakshmi and Bhattacharjee, Shubhadeep and Mohan, Sangeneni and Bhat, Navakanta (2016) High-Performance HfO2 Back Gated Multilayer MoS2 Transistors. In: IEEE ELECTRON DEVICE LETTERS, 37 (6). pp. 797-800.

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Nath, Digbijoy N and Bhat, Navakanta (2016) Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET. In: IEEE ELECTRON DEVICE LETTERS, 37 (1). pp. 119-122.

Chandrasekar, Hareesh and Ganapathi, Kolla Lakshmi and Bhattacharjee, Shubhadeep and Bhat, Navakanta and Nath, Digbijoy N (2016) Optical-Phonon-Limited High-Field Transport in Layered Materials. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (2). pp. 767-772.

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Nath, Digbijoy N and Bhat, Navakanta (2016) Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (6). pp. 2556-2562.

Ganapathi, Kolla Lakshmi and Bhat, Navakanta and Mohan, Sangeneni (2014) Influence of O-2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29 (5).

Ganapathi, Kolla Lakshmi and Bhat, Navakanta and Mohan, Sangeneni (2013) Optimization of HfO2 films for high transconductance back gated graphene transistors. In: Applied Physics Letters, 103 (7). 073105_1-073105_5.

This list was generated on Sun Oct 20 22:23:31 2019 IST.