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Jain, Ashish and Anthonysamy, S and Gupta, GS and Ganesan, V (2013) Processing of enriched elemental boron (B-10 similar to 65 at. %). In: Materials Chemistry and Physics, 140 (1). pp. 335-342.
Prasanna, S and Mohan, Rao G and Jayakumar, S and Kannan, MD and Ganesan, V (2012) Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films. In: THIN SOLID FILMS, 520 (7). pp. 2689-2694.
Jain, Ashish and Pankajavalli, R and Anthonysamy, S and Ananthasivan, K and Babu, R and Ganesan, V and Gupta, GS (2010) Determination of the thermodynamic stability of TiB2. In: Journal of Alloys and Compounds, 491 (1-2). pp. 747-752.
Neyvasagam, K and Soundararajan, N and Venkatraman, V and Ganesan, V (2007) Ellipsometric studies on cupric telluride thin films. In: Vacuum, 82 (1). pp. 72-77.
Devika, M and Reddy, Koteeswara N and Reddy, Sreekantha D and Reddy, Venkatramana S and Ramesh, K and RGopal, ES and Gunasekhar, KR and Ganesan, V and Hahn, YB (2007) Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique. In: Journal of Physics: Condensed Matter, 19 (30).
Devika, M and Reddy, Koteeswara N and Ramesh, K and Ganesan, V and Gopal, ESR and Reddy, Ramakrishna KT (2006) Influence of substrate temperature on surface structure and electrical resistivity of the evaporated tin sulphide films. In: Applied Surface Science, 253 (3). pp. 1673-1676.
Kaur, Manmeet and Srinivasan, R and Mehta, GK and Kanjilal, D and Pinto, R and Ogale, SB and Mohan, S and Ganesan, V (2006) Effect of disorder on the exponent in the coherence region in high temperature superconductors. In: Physica C: Superconductivity, 443 (1-2). 61 -68.
Bose, AC and Thangadurai, P and Ramasamy, S and Ganesan, V and Asokan, S (2006) Nonlinear I-V characteristics of nanocrystalline SnO2. In: Nanotechnology, 17 (6). pp. 1752-1757.
Chaudhuri, D and Kumar, Ashwani and Nirmala, R and Sarma, DD and Garcia-Hernandez, M and Chandra, LSS and Ganesan, V (2006) Transport and magnetic properties of conducting polyaniline doped with BX3 (X=F, Cl, and Br). In: Physical Review B, 73 (7). 075205-1.
Murthy, CN and Ganesan, V and Asokan, S (2005) Electrical switching and topological thresholds in Ge-Te and Si-Te glasses. In: Applied Physics A: Materials Science & Processing, 81 (5). pp. 939-942.
Vishwakarma, PN and Prasad, V and Subramanyam, SV and Ganesan, V (2005) Structural morphology of amorphous conducting carbon film. In: Bulletin of Materials Science, 28 (6). pp. 609-615.
Marhas, MK and Balakrishnan, K and Saravanan, P and Ganesan, V and Srinivasan, R and Kanjilal, D and Mehta, GK and Vedwyas, M and Ogale, SB and Pai, SP and Rao, MSR and Pinto, R and Rao, GM and Senthilnathan, S and Mohan, S (1999) Radiation induced modifications on microstructure and related properties of high temperature superconductor YBCO. In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with , 156 (1-4). pp. 21-29.
Marhas, Manmeet Kaur and Balakrishnan, K and Saravanan, P and Ganesan, V and Srinivasan, R and Kanjilal, D and Mehta, GK and Vedwyas, M and Ogale, SB and Pai, SP and Rao, MSR and Pinto, R and Rao, GM and Senthilnathan, S and Mohan, S (1997) Structural and transport properties of high energy ion irradiated YBCO. In: Vacuum, 48 (12). 983-988 .
Marhas, MK and Balakrishnan, K and Ganesan, V and Srinivasan, R and Kanjila, D and Mehta, GK and Muralidhar, GK and Rao, M and Nathan, S and Mohan, S (1994) Critical exponent of the electrical conductivity in the paracoherence region of a thin film of YBa2Cu3O7?x. In: Bulletin of materials science, 17 (6). pp. 585-594.