ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Browse by Author

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 5.

Conference Proceedings

Joshi, Vipin and Shankar, Bhawani and Tiwari, Shree Prakash and Shrivastava, Mayank (2017) Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN, pp. 109-112.

Journal Article

Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.

Joshi, Vipin and Tiwari, Prakash and Shrivastava, Mayank (2019) Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 561-569.

Joshi, Vipin and Tiwari, Prakash and Shrivastava, Mayank (2019) Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 570-577.

Joshi, Vipin and Soni, Ankit and Tiwari, Shree Prakash and Shrivastava, Mayank (2016) A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON NANOTECHNOLOGY, 15 (6). pp. 947-955.

This list was generated on Sun Oct 20 01:05:02 2019 IST.