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Number of items: 36.

Conference Proceedings

Kumar, V and Reddy, S and Narayanan, G (2012) Measurement of IGBT switching characteristics and loss using coaxial current transformer. In: 2012 IEEE 5th India International Conference on Power Electronics (IICPE), 6-8 Dec. 2012, Delhi.

Conference Paper

Kumar, V and Choudhary, RR and Singh, V (2009) FREP: A Soft-Error Resilient Pipelined RISC Architecture. In: IEEE East-West Design and Test Symposium (EWDTS) 2009, Sep 2009, Moscow, Russia.

Gurumurthy, S and Bhat, HL and Sundersheshu, BS and Bagai, RK and Kumar, V (1998) Growth and defects in cadmium telluride and related alloys. In: SPIE- 9th International Workshop on Physics of Semiconductor Devices: IWPSD97, Delhi, India, Vol.3316 (2),738-745.

Gurumurthy, S and Bhat, HL and Kumar, V (1997) Nitridation effects in n-CdTe. In: 7th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST'97, 5-10 October, Spa, Belgium, Vol.57-58, 441-446.

Dutta, PS and Bhat, HL and Kumar, V (1996) Effect of hydrogenation on the electrical and optical properties of GaSb. In: Symposium A – Ion-Solid Interactions for Materials Modification and Processing, 27 Nov.-1 Dec. 1995, Boston, MA, USA, pp. 533-538.

Ghosh, S and Kumar, V (1992) Direct evidence for negative-U nature of DX centre in $Al_xGa_{1-x}As$. In: Proceedings of the Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India, pp. 82-84.

Ghosh, S and Kumar, V (1992) Evidence for metastable state of DX center in $Al_xGa_{1-x}As$. In: Defect Engineering in Semiconductor Growth, Processing and Device Technology Symposium, 26 April-1 May 1992, San Francisco, CA, USA, pp. 579-584.

Balasubramanian, S and Kumar, V and Balasubramanian, N and Premachandran, V (1992) Passivation of surface and bulk defects in InP. In: Defect Engineering in Semiconductor Growth, Processing and Device Technology Symposium, 26 April-1 May 1992, San Francisco, CA, USA, pp. 413-418.

Journal Article

Srinivasulu, G and Ghosal, P and Singh, N and Naze, L and Nandy, TK and Kumar, V and Kutumbarao, VV and Banerjee, D and Strudel, JL (2014) Monotonic and low cycle fatigue behavior of an O+B2 alloy at high temperatures. In: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 599 . pp. 268-278.

Hoque, Manjura S and Srivastava, C and Kumar, V and Venkatesh, N and Das, HN and Saha, DK and Chattopadhyay, K (2013) Exchange-spring mechanism of soft and hard ferrite nanocomposites. In: Materials Research Bulletin, 48 (8). pp. 2871-2877.

Panathur, Naveen and Dalimba, Udayakumar and Koushik, Pulla Venkat and Alvala, Mallika and Yogeeswari, Perumal and Sriram, Dharmarajan and Kumar, V (2013) Identification and characterization of novel indole based small molecules as anticancer agents through SIRT1 inhibition. In: EUROPEAN JOURNAL OF MEDICINAL CHEMISTRY, 69 . pp. 125-138.

Dutta, PS and Bhat, HL and Kumar, V (1997) The physics and technology of gallium antimonide: An emerging optoelectronic material. In: Journal of Applied Physics, 81 (9). pp. 5821-5870.

Dutta, PS and Sreedhar, AK and Bhat, HL and Dubey, GC and Kumar, V and Dieguez, E and Pal, U and Piqueras, J (1996) Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment. In: Journal of Applied Physics, 79 (6). pp. 3246-3252.

Dutta, PS and Rao, Koteswara KSR and Bhat, HL and Kumar, V (1995) Photolumineseence studies in bulk gallium antimonide. In: Applied Physics A: Materials Science & Processing, 61 (2). pp. 149-152.

Dutta, PS and Rao, Koteswara KSR and Bhat, HL and Naik, Gopalakrishna K and Kumar, V (1995) Surface morphology, electrical and optical properties of gallium antimonide layers grown by liquid phase epitaxy. In: Journal of Crystal Growth, 152 (1-2). pp. 14-20.

Ghosh, S and Kumar, V (1993) Stretched Exponential Relaxation of Persistent Photoconductivity Due to the Si-Related DX Centre in $Al_xGa_{1-x}As$. In: Europhysics Letters, 24 (9). pp. 779-784.

Pandian, V and Kumar, V (1992) Sequential light irradiation and two-stage photoquenching in GaAs:EL2. In: Journal of Applied Physics, 72 (8). pp. 3818-3820.

Balasubramanian, Sathya and Kumar, V (1992) Properties of GaAs:V grown by liquid phase epitaxy. In: Semiconductor Science and Technology, 74 (8). pp. 1117-1118.

Rao, Koteswara KSR and Kumar, V and Premachandran, SK and Raghunath, KP (1991) Interaction of gold-related and irradiation-induced defects in silicon. In: Journal of Applied Physics, 69 (12). pp. 8205-8209.

Rao, Koteswara KSR and Kumar, V and Premachandran, SK and Raghunath, KP (1991) Relationship of the gold related donor and acceptor levels in silicon. In: Journal of Applied Physics, 69 (4). pp. 2714-2716.

Mohapatra, YN and Kumar, V (1990) Trapping kinetics and metastability of the DX center in AlGaAs. In: Journal of Applied Physics, 68 (7). pp. 3431-3434.

Rao, Koteswara KSR and Kumar, V (1990) Estimation of trap concentration in linearly graded junctions using DLTS. In: Physica Status Solidi A, 117 (1). pp. 251-257.

Iyer, SB and Harshavardhan, KS and Kumar, V (1990) Study of stress Relief Patterns In Diamond-Like Carbon-Films. In: Institute of Physics Conference Series (111). pp. 133-142.

Mohapatra, YN and Kumar, V (1989) Temperature Dependence of Photocurrent in Undoped Semi-insulating Gallium Arsenide. In: Physica Status Solidi A: Applied Research, 114 (2). pp. 659-663.

Chattopadhyay, P and Kumar, V (1988) Experimental investigation of the dependence of barrier height on metal work function for metal---SiO2---p---Si (MIS) Schottky-barrier diodes in the presence of inversion. In: Solid-State Electronics, 31 (2). pp. 143-146.

Pandian, V and Kumar, V (1988) Silver Related Deep Levels in Silicon. In: Physica Status Solidi (a), 109 (1). pp. 273-278.

Balasubramanyam, N and Kumar, V (1987) On the Quenched-In Defects in n-Type Silicon. In: Physica Status Solidi A: Applied Research, 100 (1). pp. 239-244.

Indusekhar, H and Kumar, V (1986) Properties of iron related quenched-in levels in p-silicon. In: Physica Status Solidi A-Applied Research, 95 (1). 269 -278.

Iyer, SB and Kumar, V (1985) Graphical method to include temperature variation of activation energy in Hall data analysis. In: Journal of Applied Physics, 57 (12). pp. 5529-5531.

Iyer, SB and Kumar, V (1985) Investigation of the Ec-0.11 eV level of iron in silicon. In: Physica Status Solidi (a), 88 (2). K179 -K182.

Gupta, DS and Chandra, MM and Kumar, V (1983) Direct Measurement of Interface State Electron Capture Cross-Section in MOS System by DLTS Technique. In: Physica Status Solidi A, 80 (2). K209-K211.

Kumar, V and Indusekhar, H (1983) New temperature fluctuation method for direct determination of thermal activation energy of deep levels in semiconductors. In: Electronics Letters, 19 (7). pp. 271-272.

Kumar, V and Iyer, SB (1983) Characterization of surface states in MOS capacitors by a modified DLTS technique. In: Physica Status Solidi A: Applied Research, 76 (2). pp. 637-640.

Kalyanaraman, V and Kumar, V (1982) Properties of the gold related acceptor level in silicon. In: Physica Status Solidi A, 70 (1). pp. 317-323.

Editorials/Short Communications

Harish, CM and Kumar, V and Prabhakar, A (1993) A novel laser direct write technique for fabrication of thin film MICs. In: IEEE Transactions on Semiconductor Manufacturing, 6 (3). pp. 279-282.

Harish, CM and Kumar, V and Prabhakar, A (1988) Direct Writing of Copper Film Patterns by Laser-Induced Decomposition of Copper Acetate. In: Journal of the Electrochemical Society, 135 (11). 2903 -2904.

This list was generated on Fri Dec 19 12:33:07 2014 IST.