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Number of items: 10.

Conference Paper

Krupanidhi, SB and Hudait, MK and Modak, P and Hardikar, S and Kumar, Vikram and Agarwal, SK (1998) MOCVD epitaxy of GaAs/Ge heterostructures. In: International workshop on the Physics of Semiconductor Devices: IWPSD97, vol.1, 16-20 Dec. 1997, Delhi, India, pp. 262-270.

Hudait, MK and Modak, P and Hardikar, S and Rao, KSRK and Krupanidhi, SB (1998) Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD. In: International workshop on the physics of semiconductor devices: IWPSD 97, Vol. 3316, 16-20 Dec. 1997, Delhi, India, pp. 312-316.

Modak, P and Hudait, MK and Krupanidhi, SB (1996) Epitaxial GaAs layers by MOCVD process: Growth and characterization. In: 8th International Workshop on Physics of Semiconductor Devices, DEC 11-16, 1995, NEW DELHI, INDIA.

Journal Article

Teredesai, P and Muthu, DVS and Chandrabhas, N and Meenakshi, S and Vijayakumar, V and Modak, P and Rao, RS and Godwal, BK and Sikka, SK and Sood, AK (2004) High pressure phase transition in metallic LaB6: Raman and X-ray diffraction studies. In: Solid State Communications, 129 (12). pp. 791-796.

Hudait, MK and Modak, P and Krupanidhi, SB (1999) Si incorporation and Burstein-Moss shift in n-type GaAs. In: Materials Science and Engineering B, 60 (1). pp. 1-11.

Hardikar, S and Hudait, MK and Modak, P and Krupanidhi, SB and Padha, N (1999) Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures. In: Applied Physics A: Materials Science & Processing, 68 (1). pp. 49-55.

Hudait, MK and Modak, P and Rao, KSRK and Krupanidhi, SB (1998) Low temperature photoluminescence properties of Zn-doped GaAs. In: Materials Science and Engineering B, 57 (1). pp. 62-70.

Hudait, MK and Modak, P and Hardikar, S and Rao, KSRK and Krupanidhi, SB (1998) Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates. In: Materials Science and Engineering B, 55 (1-2). pp. 53-67.

Hudait, MK and Modak, P and Hardikar, S and Krupanidhi, SB (1998) Photoluminescence studies on Si-doped GaAs/Ge. In: Journal of Applied Physics, 83 (8). pp. 4454-4461.

Editorials/Short Communications

Teredesai, PV and Muthu, DVS and Narayan, C and Sood, AK and Meenakshi, S and Vijayakumar, V and Modak, P and Rao, RS and Godwal, BK and Sikka, SK (2002) High pressure phase transition in metallic LaB6: An interesting example of Lifshitz transition. In: Abstracts of Papers - American Chemical Society, National Meeting, 223 (part 2). A47-A47.

This list was generated on Fri Nov 28 19:37:56 2014 IST.