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Number of items: 19.

Conference Proceedings

Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.

Conference Paper

Naik, KG and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2005) Anomalous temperature dependence of Fermi-edge singularity in modulation-doped AlGaAs/InGaAs/GaAs hetero-structures. In: Symposium on Micro- and Nanosystems held at the 2005 MRS Spring Meeting, MAR 28-APR 01, 2005, San Francisco.

Journal Article

Jangir, Suresh K and Malik, Hitendra K and Kumar, Anand and Rao, D VSridhar and Muralidharan, R and Mishra, Puspashree (2019) Influence of Molecular Beam Epitaxy (MBE) Parameters on Catalyst-Free Growth of InAs Nanowires on Silicon (111) Substrate. In: JOURNAL OF ELECTRONIC MATERIALS, 48 (4). pp. 2174-2182.

Jangir, Suresh K and Malik, Hitendra K and Saho, Praveen and Muralidharan, R and Srinivasan, T and Mishra, Puspashree (2019) Electrical transport and gas sensing characteristics of dielectrophoretically aligned MBE grown catalyst free InAs nanowires. In: NANOTECHNOLOGY, 30 (10).

Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.

Soman, Rohith and Sharma, Manish and Ramesh, Nayana and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta (2018) Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9).

Jaiswal, Piyush and Ul Muazzam, Usman and Pratiyush, Anamika Singh and Mohan, Nagaboopathy and Raghavan, Srinivasan and Muralidharan, R and Shivashankar, S A and Nath, Digbijoy N (2018) Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics. In: APPLIED PHYSICS LETTERS, 112 (2).

Kumar, Sandeep and Remesh, Nayana and Dolmanan, S B and Tripathy, S and Raghavan, S and Muralidharan, R and Nath, Digbijoy N (2017) Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si. In: SOLID-STATE ELECTRONICS, 137 . pp. 117-122.

Kumar, Sandeep and Gupta, Priti and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, R and Nath, Digbijoy N (2017) Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (12). pp. 4868-4874.

Jangir, Suresh K and Malik, Hitendra K and Dalal, Sandeep and Pandey, Akhilesh and Srinivasan, T and Muraleedharan, K and Muralidharan, R and Mishra, Puspashree (2017) X-ray pole figure analysis of catalyst free InAs nanowires on Si substrate. In: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 225 . pp. 108-114.

Jangir, Suresh K and Malik, Hitendra K and Dalal, Sandeep and Pandey, Akhilesh and Srinivasan, T and Muraleedharan, K and Muralidharan, R and Mishra, Puspashree (2017) X-ray pole figure analysis of catalyst free InAs nanowires on Si substrate. In: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 225 . pp. 108-114.

Kaushik, JK and Balakrishnan, VR and Mongia, D and Kumar, U and Dayal, S and Panwar, BS and Muralidharan, R (2016) Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors. In: THIN SOLID FILMS, 612 . pp. 147-152.

Mishra, MK and Sharma, RK and Tyagi, R and Manchanda, R and Pandey, AK and Thakur, OP and Muralidharan, R (2016) Large negative magnetoresistance induced by interplay between smooth disorder and antidots in AlGaN/GaN HEMT structures. In: MATERIALS RESEARCH EXPRESS, 3 (4).

Rao, Sridhara DV and Sankarasubramanian, R and Kumar, Deepak and Singh, V and Bhat, Mahadeva K and Mishra, P and Vinayak, S and Srinivasan, T and Tyagi, R and Muraleedharan, K and Muralidharan, R and Banerjee, D (2016) Microstructural and Compositional Characterisation of Electronic Materials. In: DEFENCE SCIENCE JOURNAL, 66 (4, SI). pp. 341-352.

Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R (2011) Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells. In: BULLETIN OF MATERIALS SCIENCE, 34 (7). pp. 1645-1648.

Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2005) Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures. In: MRS Proceedings, 872 . J18.18.

Naik, Gopalakrishna K and Rao, KSRK and Srinivasanb, T and Muralidharan, R and Mehta, SK (2004) Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study. In: Solid State Communications., 132 (12). pp. 805-808.

Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2004) Photoluminescence study of biexciton luminescence on the naturally occurring quantum dots in undoped InGaAs/GaAs quantum wells. In: Physica B: Condensed Matter, 353 (3-4). pp. 205-209.

Patnaik, LM and Ramakrishna, AK and Muralidharan, R (1997) Distributed Algorithms for Mobile Hosts. In: IEE Proceedings of Computers and Digital Techniques, 144 (2). pp. 49-56.

This list was generated on Thu Oct 17 08:18:18 2019 IST.