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Number of items: 7.

Conference Proceedings

Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank and Gossner, Harald (2018) Performance and Reliability Insights of Drain Extended FinFET Devices for High Voltage SoC Applications. In: 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), MAY 13-17, 2018, Chicago, IL, pp. 72-75.

Paul, Milova and Kumar, BSampath and Gossner, Harald and Shrivastava, Mayank (2018) Contact and Junction Engineering in Bulk FinFET Technology for Improved ESD/Latch-up Performance with Design Trade-offs and its Implications on Hot Carrier Reliability. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.

Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2017) FinFET SCR: Design Challenges and Novel Fin SCR Approaches for On-Chip ESD Protection. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.

Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank (2017) On the Design Challenges of Drain Extended FinFETs for Advance SoC Integration. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN, pp. 189-192.

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2017) Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete? In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 391-394.

Journal Article

Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2018) Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (11). pp. 4755-4763.

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2018) Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (7). pp. 2981-2989.

This list was generated on Tue Oct 22 14:57:30 2019 IST.