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Number of items: 35.

Book Chapter

Rao, KSRK and Kumar, A and Gopal, ESR and Sangunni, KS and Asha, G (1998) Effect of bismuth doping in GeSe and GeSeTe glasses by photoluminescence spectroscopy. [Book Chapter]

Conference Proceedings

Shashidhar, R and Angadi, Basavaraj and ChandraShekar, HD and Murthy, LCS and Rao, KSRK (2015) Effect of ethanol concentration on the porosity of spray pyrolyzed TiO2 films and their utility as humidity sensor. In: 2nd International Symposium on Physics and Technology of Sensors, MAR 08-10, 2015, Pune, INDIA, pp. 52-58.

Conference Paper

Ivanova, ZG and Aneva, Z and Ganesan, R and Tonchev, D and Gopal, ESR and Rao, KSRK and Allen, TW and DeCorby, RG and Kasap, SO (2007) Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorption. In: 15th International Symposium on Non-Oxide Glasses and New Optical Glasses, APR 10-14, 2006, ndian Inst Sci, Bangalore.

Naik, KG and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2005) Anomalous temperature dependence of Fermi-edge singularity in modulation-doped AlGaAs/InGaAs/GaAs hetero-structures. In: Symposium on Micro- and Nanosystems held at the 2005 MRS Spring Meeting, MAR 28-APR 01, 2005, San Francisco.

Bhat, Asha N and Sangunni, KS and Rao, KSRK (2001) PL due to discrete gap levels in some chalcogenide glasses - a configurational coordinate diagram illustration. In: Luminescence and Luminescent Materials. Symposium, 17-19 April 2001, San Francisco, CA, USA, G3.4.1-G3.4.6.

Hudait, MK and Modak, P and Hardikar, S and Rao, KSRK and Krupanidhi, SB (1998) Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD. In: International workshop on the physics of semiconductor devices: IWPSD 97, Vol. 3316, 16-20 Dec. 1997, Delhi, India, pp. 312-316.

Journal Article

Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R (2011) Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells. In: BULLETIN OF MATERIALS SCIENCE, 34 (7). pp. 1645-1648.

Khatei, Jayakrishna and Pendyala, Naresh Babu and Rao, KSRK (2011) Solvothermal synthesis of Hg1-xCdxTe nanostructures-Their structural and optical properties. In: Journal of Alloys and Compounds, 509 (13). pp. 4632-4635.

Bhat, Asha N and Sangunni, KS and Rao, KSRK (2011) PL due to Discrete Gap Levels in Some Chalcogenide Glasses- A Configurational Coordinate Diagram Illustration. In: MRS Proceedings, 667 . G3.4.

Kulkarni, Gururaj Anand and Murthy, Oruganty VSN and Rao, KSRK and Bhat, SV and Chakraborty, BR (2010) Coexistence of para and ferromagnetic phases of Fe3+ in undoped CdZnTe (Zn similar to 4%) crystals. In: Solid State Communications, 150 (43-44). pp. 2174-2177.

Naik, Gopalakrishna K and Rao, KSRK (2009) Electroluminescence from modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells. In: Physica B: Condensed Matter, 404 (2). pp. 210-212.

Kulkarni, Gururaj Anand and Sathe, VG and Rao, KSRK and Muthu, DVS and Sharma, RK (2008) Micro-Raman imaging of Te precipitates in CdZnTe (Zn similar to 4%) crystals. In: Journal of Applied Physics, 105 (6). pp. 1-6.

Reddy, Sudhakar B and Buddhudu, S and Rao, KSRK and Babu, Naresh P and Annapurna, K (2008) Optical Analysis of Er3+:Boro-Fluoro-Phosphate Glasses. In: Spectroscopy Letters, 41 (8). pp. 376-384.

Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2005) Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures. In: MRS Proceedings, 872 . J18.18.

Naik, Gopalakrishna K and Rao, KSRK and Srinivasanb, T and Muralidharan, R and Mehta, SK (2004) Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study. In: Solid State Communications., 132 (12). pp. 805-808.

Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2004) Photoluminescence study of biexciton luminescence on the naturally occurring quantum dots in undoped InGaAs/GaAs quantum wells. In: Physica B: Condensed Matter, 353 (3-4). pp. 205-209.

Bhat, Asha N and Sangunni, KS and Rao, KSRK (2003) A Fourier-transform photoluminescence study of radiative recombination mechanism in chalcogenide glasses. In: Journal of Non-Crystalline Solids, 319 (1-2). pp. 192-199.

Bhat, Asha N and Sangunni, KS and Rao, KSRK (2001) The role of defects in carrier type reversal in bismuth doped Ge-Se glasses by photoluminescence spectroscopy. In: Journal of Optoelectronics and Advanced Materials, 3 (3). pp. 735-740.

Deepthy, A and Rao, KSRK and Bhat, HL and Kumar, Ravi and Asokan, K (2001) Gray track formation in KTiOPO4 by swift ion irradiation. In: Journal of Applied Physics, 89 (11). pp. 6560-6562.

Deepthy, A and Rao, KSRK and Bhat, HL and Kumar, Ravi and Asokan, K (2001) Gray track formation in $KTiOPO_4$ by swift ion irradiation. In: Journal of Applied Physics, 89 (11). pp. 6560-6562.

Rao, KSRK and Katayama, T and Yokoyama, S and Hirose, M (2000) Optimum atomic spacing for AlAs etching in GaAs epitaxial lift-off technology. In: Japanese Journal of Applied Physics, 39 (5B). L457-L459.

Deepthy, A and Satyanarayan, MN and Rao, KSRK and Bhat, HL (1999) Photoluminescence studies on gray tracked KTiOPO4 single crystals. In: Journal of Applied Physics, 85 (12). 8332-8336 .

Venkataraghavan, R and Udayashankar, NK and Rodrigues, Blasius Victor and Rao, KSRK and Bhat, HL (1999) Design and fabrication of liquid phase epitaxy system. In: Bulletin Of Materials Science, 22 (2). pp. 133-137.

Rao, KSRK and Rangaiah, Pandu SV and Reddy, PN and Reddy, BPN (1999) Identification of the nature of platinum related midgap state in silicon by deep level transient spectroscopy. In: Journal of Applied Physics, 85 (4). pp. 2175-2178.

Hudait, MK and Modak, P and Rao, KSRK and Krupanidhi, SB (1998) Low temperature photoluminescence properties of Zn-doped GaAs. In: Materials Science and Engineering B, 57 (1). pp. 62-70.

Rangaiah, SVP and Reddy, SV and Reddy, PN and Salkalachas, S and Rao, KSRK and Reddy, BPN (1998) Studies on process induced deep levels in silicon. In: Bulletin of Electrochemistry, 14 (11). pp. 394-397.

Hudait, MK and Modak, P and Hardikar, S and Rao, KSRK and Krupanidhi, SB (1998) Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates. In: Materials Science and Engineering B, 55 (1-2). pp. 53-67.

Venkataraghavan, R and Rao, KSRK and Bhat, HL (1998) The effect of temperature gradient and ampoule velocity on the composition and other properties of Bridgman-grown indium antimonide. In: Journal of Crystal Growth, 186 (3). pp. 322-328.

Bhattacharyya, Somnath and Rastogi, A and Bhat, SV and Rao, KSRK and Subramanyam, SV and Kanjilal, D (1998) Electron spin resonance study on high energy heavy ion irradiated conducting carbon films. In: Solid State Communications, 105 (8). pp. 543-546.

Venkataraghavan, R and Rao, KSRK and Bhat, HL (1997) The effect of growth parameters on the position of the melt–solid interface in Bridgman growth of indium antimonide. In: Journal of Physics D: Applied Physics, 30 (17). L61-L63.

Venkataraghavan, R and Rao, KSRK and Bhat, HL and Pal, S and Dubey, GC (1997) Low threshold ovonic switching in a-Si:H/InSb heterostructures. In: Solid State Communications, 102 (10). 759-762 .

Venkataraghavan, R and Rao, KSRK and Hegde, MS and Bhat, HL (1997) Influence of Growth Parameters on the Surface and Interface Quality of Laser Deposited InSb/CdTe Heterostructures. In: Physica Status Solid (a), 163 (1). pp. 93-100.

Rao, KSRK and Sreedhar, AK and Bhat, HL and Singh, RA and Dubey, GC and Kumar, Vikram (1996) Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates. In: Applied Physics Letters, 68 (11). pp. 1458-1460.

Ventakaraghavan, R and Satyalakshmi, KM and Rao, KSRK and Sreedhar, AK and Hegde, MS and Bhat, HL (1996) Pulsed laser deposition of indium antimonide. In: Bulletin of Materials Science, 19 (1). pp. 123-129.

Gurumurthy, S and Rao, KSRK and Sreedhar, AK and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumaran, V (1994) Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium. In: Bulletin of materials science, 17 (6). 1057 -1064 .

This list was generated on Tue Oct 22 02:53:02 2019 IST.