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Conference Proceedings

Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Jali, VM and Krupanidhi, SB (2014) Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy. In: 10th International Conference on Nitride Semiconductors (ICNS), AUG 25-30, 2013, Washington, DC, pp. 932-935.

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011 , Kanpur, INDIA.

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kumar, Mahesh and Roul, Basanta and Krupanidhi, SB (2012) Wurtzite InN nanodots on Si(100) by molecular beam epitaxy. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011, Kanpur, INDIA.

Journal Article

Pant, Rohit Kumar and Singh, Deependra Kumar and Roul, Basanta and Chowdhury, Arun Malia and Chandan, Greeshma and Nanda, Karuna K and Krupanidhi, Saluru B (2019) Photodetection Properties of Nonpolar a-Plane GaN Grown by Three Approaches Using Plasma-Assisted Molecular Beam Epitaxy. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE . (In Press)

Bhati, Vijendra Singh and Sheela, D and Roul, Basanta and Raliya, Ramesh and Biswas, Pratim and Kumar, Manish and Roy, MS and Nanda, KK and Krupanidhi, SB and Kumar, Mahesh (2019) NO2 gas sensing performance enhancement based on reduced graphene oxide decorated V2O5 thin films. In: NANOTECHNOLOGY, 30 (22).

Goel, Neeraj and Kumar, Rahul and Jain, Shubhendra Kumar and Rajamani, Saravanan and Roul, Basanta and Gupta, Govind and Kumar, Mahesh and Krupanidhi, S B (2019) A high-performance hydrogen sensor based on a reverse-biased MoS2/GaN heterojunction. In: NANOTECHNOLOGY, 30 (31).

Mukhokosi, Emma P and Roul, Basanta and Krupanidhi, Saluru B and Nanda, Karuna K (2019) Toward a Fast and Highly Responsive SnSe2-Based Photodiode by Exploiting the Mobility of the Counter Semiconductor. In: ACS APPLIED MATERIALS & INTERFACES, 11 (6). pp. 6184-6194.

Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2018) Temperature dependent electrical properties of AlN/Si heterojunction. In: JOURNAL OF APPLIED PHYSICS, 124 (20).

Goel, Neeraj and Kumar, Rahul and Roul, Basanta and Kumar, Mahesh and Krupanidhi, S B (2018) Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (37).

Pant, Rohit and Shetty, Arjun and Chandan, Greeshma and Roul, Basanta and Nanda, K K and Krupanidhi, S B (2018) In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN. In: ACS APPLIED MATERIALS & INTERFACES, 10 (19). pp. 16918-16923.

Roul, Basanta and Pant, Rohit and Chirakkara, Saraswathi and Chandan, Greeshma and Nanda, K K and Krupanidhi, S B (2017) Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (10). pp. 4161-4166.

Shetty, Arjun and Kumar, Mahesh and Roul, Basanta and Vinoy, KJ and Krupanidhi, SB (2016) InN Quantum Dot Based Infra-Red Photodetectors. In: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 16 (1). pp. 709-714.

Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2016) Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE. In: JOURNAL OF CRYSTAL GROWTH, 433 . pp. 74-79.

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Krupanidhi, SB (2015) Binary group III-nitride based heterostructures: band offsets and transport properties. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 48 (42).

Mukundan, Shruti and Roul, Basanta and Shetty, Arjun and Chandan, Greeshma and Mohan, Lokesh and Krupanidhi, SB (2015) Enhanced UV detection by non-polar epitaxial GaN films. In: AIP ADVANCES, 5 (12).

Sinha, Neeraj and Roul, Basanta and Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Jali, VM and Krupanidhi, SB (2015) Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. In: MATERIALS RESEARCH BULLETIN, 61 . pp. 539-543.

Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Roul, Basanta and Krupanidhi, SB and Shinde, Satish and Nanda, KK and Maiti, R and Ray, SK (2015) High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE. In: AIP ADVANCES, 5 (3).

Roul, Basanta and Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB and Kumar, Nitesh and Sundaresan, A (2015) Observation of Room Temperature Ferromagnetism in InN Nanostructures. In: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 15 (6). pp. 4426-4430.

Shetty, Arjun and Roul, Basanta and Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Vinoy, KJ and Krupanidhi, SB (2015) Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes. In: AIP ADVANCES, 5 (9).

Chandan, Greeshma and Mukundan, Shruti and Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2015) Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias. In: JOURNAL OF APPLIED PHYSICS, 118 (2).

Mohan, Lokesh and Chandan, Greeshma and Mukundan, Shruthi and Roul, Basanta and Krupanidhi, SB (2014) Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures. In: JOURNAL OF APPLIED PHYSICS, 116 (23).

Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Roul, Basanta and Krupanidhi, SB (2014) Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy. In: JOURNAL OF APPLIED PHYSICS, 116 (20).

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2013) Substrate impact on the growth of InN nanostructures by droplet epitaxy. In: Physica Status Solidi (c), 10 (3). pp. 409-412.

Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kumar, Mahesh and Krupanidhi, SB (2013) Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction. In: Journal of Nanoscience and Nanotechnology, 13 (1). pp. 498-503.

Bhat, Thirumaleshwara N. and Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB (2013) Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 24 (9). pp. 3371-3375.

Rajpalke, Mohana K and Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Krupanidhi, SB (2013) Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire. In: Physica Status Solidi C - Current Topics in Solid State Physics, 10 (3). pp. 381-384.

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Kalghatgi, AT and Krupanidhi, SB (2012) Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE. In: Journal of Crystal Growth, 354 (1). pp. 208-211.

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 152 (18). pp. 1771-1775.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE. In: MATERIALS RESEARCH BULLETIN, 47 (6). pp. 1306-1309.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (5). pp. 994-997.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy. In: THIN SOLID FILMS, 520 (15). pp. 4911-4915.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kalghatgi, AT and Krupanidhi, SB (2012) Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE. In: Journal of Alloys and Compounds, 513 . pp. 6-9.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy. In: Japanese Journal of Applied Physics, 51 (2).

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy. In: Physica Status Solidi B, 249 (1). pp. 58-61.

Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (8). pp. 1575-1578.

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB (2012) Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction. In: Journal of Applied Physics, 112 (2).

Kumar, Mahesh and Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions. In: CURRENT APPLIED PHYSICS, 13 (1). pp. 26-30.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Krupanidhi, SB (2012) Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy. In: APPLIED PHYSICS EXPRESS, 5 (8).

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB and Sinha, Neeraj (2011) Evidences for ambient oxidation of indium nitride quantum dots. In: Physica Status Solidi B, 248 (12). pp. 2853-2856.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kalghatgi, Ajit T and Krupanidhi, SB (2011) Transport and infrared photoresponse properties of InN nanorods/Si heterojunction. In: Nanoscle Research Letters, 6 .

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB (2011) Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy. In: Journal of Applied Physics, 110 (9).

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Kalghatgi, AT and Krupanidhi, SB and Kumar, Nitesh and Sundaresan, A (2011) Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films. In: Applied Physics Letters, 99 (16).

Kumar, Mahesh and Roul, Basanta and Shetty, Arjun and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate. In: Applied Physics Letters, 99 (15).

Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 151 (20). pp. 1420-1423.

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes. In: Journal of Applied Physics, 110 (6).

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Study of band offsets in InN/Ge heterojunctions. In: Surface Science, 605 (15-16). L33-L37.

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Dash, S and Tyagi, AK and Kalghatgi, AT and Krupanidhi, SB (2011) Reduction of oxygen impurity at GaN/beta-Si(3)N(4)/Si interface via SiO(2) to Ga(2)O conversion by exposing of Si surface under Ga flux. In: Journal of Crystal Growth, 327 (1). pp. 272-275.

Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Bhat, Thirumaleshwara N and Sinha, Neeraj and Krupanidhi, SB (2011) Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. In: Scripta Materialia, 65 (1). pp. 33-36.

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE. In: Journal of Luminescence, 131 (4). pp. 614-619.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE. In: Journal of Nanoparticle Research, 13 (3). pp. 1281-1287.

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Negative differential capacitance in n-GaN/p-Si heterojunctions. In: Solid State Communications, 151 (5). pp. 356-359.

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. In: Journal of Applied Physics, 109 (4).

Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kumar, Mahesh and Misra, P and Kukreja, LM and Sinha, Neeraj and Krupanidhi, SB (2011) Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE. In: Journal of Crystal Growth, 314 (1). pp. 5-8.

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE. In: Applied Surface Science, 257 (6). pp. 2107-2110.

Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Krupanidhi, SB and Sinha, Neeraj (2011) Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy. In: Journal of Applied Physics, 109 (12). p. 123707.

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2011) Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes. In: Journal of Nanomaterials .

Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kalghatgi, AT and Krupanidhi, SB (2011) Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy. In: Journal of Applied Physics, 110 (11). 114317 -114317.

Kumari, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhib, SB (2010) Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy. In: Advanced Science Letters, 3 (4). pp. 379-384.

Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kumar, Mahesh and Krupanidhi, SB and Sinha, Neeraj (2010) Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures. In: Applied Physics Letters, 97 (20).

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE. In: Materials Research Bulletin, 45 (11). pp. 1581-1585.

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy. In: Nanoscience and Nanotechnology Letters, 2 (3). pp. 257-260.

This list was generated on Fri Oct 18 20:03:17 2019 IST.